d a t a sh eet product speci?cation 2002 sep 27 discrete semiconductors BLL1214-35 l-band radar ldmos driver transistor m3d381
2002 sep 27 2 philips semiconductors product speci?cation l-band radar ldmos driver transistor BLL1214-35 features high power gain easy power control excellent ruggedness source on mounting base eliminates dc isolators, reducing common mode inductance. applications l-band radar applications in the 1200 to 1400 mhz frequency range. description silicon n-channel enhancement mode lateral d-mos transistor encapsulated in a 2-lead flange package (sot467c) with a ceramic cap. the common source is connected to the flange. pinning - sot467c pin description 1 drain 2 gate 3 source, connected to ?ange 1 3 2 top view mbk584 fig.1 simplified outline. quick reference data rf performance at t h =25 c in a common source test circuit. limiting values in accordance with the absolute maximum rating system (iec 60134). mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) pulsed class-ab; t=1ms; d =10% 1200 to 1400 36 35 >13 >43 symbol parameter conditions min. max. unit v ds drain-source voltage - 75 v v gs gate-source voltage - 15 v p tot total power dissipation under rf conditions; t h 25 c - 110 w t stg storage temperature - 65 +150 c t j junction temperature - 200 c
2002 sep 27 3 philips semiconductors product speci?cation l-band radar ldmos driver transistor BLL1214-35 thermal characteristics note 1. thermal resistance is determined under rf operating conditions; t p = 1 ms, d =10%. characteristics t j =25 c unless otherwise speci?ed. application information rf performance in a common source class-ab circuit. t h =25 c; z th mb-h = 0.65 k/w, unless otherwise speci?ed. ruggedness in class-ab operation the BLL1214-35 is capable of withstanding a load mismatch corresponding to vswr =5:1 through all phases under the following conditions: v ds = 36 v; frequency from 1200 mhz to 1400 mhz at rated load power. symbol parameter conditions value unit z th j-h thermal impedance from junction to heatsink t h =25 c; note 1 1.1 k/w symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.7 ma 75 -- v v gsth gate-source threshold voltage v ds = 10 v; i d =70ma 4.5 - 5.5 v i dss drain-source leakage current v gs = 0; v ds =36v -- 10 m a i dsx on-state drain current v gs =v gsth +9v; v ds =10v 10 -- a i gss gate leakage current v gs = 20 v; v ds =0 -- 125 na g fs forward transconductance v ds = 10 v; i d = 2.5 a - 2 - s r dson drain-source on-state resistance v gs = 10 v; i d = 2.5 a - 300 - m w mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) pulsed class-ab; t=1ms; d =10% 1200 to 1400 36 50 35 >13 >43 typical impedance frequency (ghz) z s ( w ) z l ( w ) 1.20 6.48 - j 3.9 1.95 + j 3.27 1.25 3.88 - j 3.2 1.90 + j 2.57 1.30 3.28 - j 2.4 2.01 + j 2.27 1.35 2.55 - j 1.48 2.20 + j 2.26 1.40 1.69 - j 0.51 1.72 + j 2.35
2002 sep 27 4 philips semiconductors product speci?cation l-band radar ldmos driver transistor BLL1214-35 handbook, halfpage 0 (1) (2) (3) 1 50 0 10 20 30 40 0.2 0.4 0.6 0.8 p i (w) p l (w) mld923 fig.2 load power as a function of input power; typical values. (1) f = 1.2 ghz. (2) f = 1.3 ghz. (3) f = 1.4 ghz. t p = 1 ms; d = 10%. handbook, halfpage 0 (1) (2) (3) 50 20 15 16 17 18 19 10 20 30 40 p l (w) g p (db) mld924 fig.3 power gain as a function of load power; typical values. (1) f = 1.2 ghz. (2) f = 1.3 ghz. (3) f = 1.4 ghz. t p = 1 ms; d = 10%. handbook, halfpage 0 (3) (1) (2) 10 50 20 30 40 mld925 p l (w) h (%) 60 0 20 40 fig.4 efficiency as a function of load power; typical values. (1) f = 1.2 ghz. (2) f = 1.3 ghz. (3) f = 1.4 ghz. t p = 1 ms; d = 10%. handbook, halfpage 1.1 1.2 f (ghz) g p (db) g p h d (%) h d 1.3 1.5 20 15 19 1.4 18 17 16 60 10 50 40 30 20 mld926 fig.5 power gain and efficiency as functions of frequency; typical values. t p = 1 ms; d = 10%.
2002 sep 27 5 philips semiconductors product speci?cation l-band radar ldmos driver transistor BLL1214-35 handbook, full pagewidth c1 c3 c4 c5 c7 c8 c9 c10 c14 c11 c13 mce033 c12 c6 r1 fig.6 component layout. shaded areas indicate tuning stubs. list of components (see fig.6) component description value catalogue no. c1, c12 capacitor 51 pf atc100a c3 capacitor 6.8 pf atc100a c4, c9 capacitor 47 pf atc100a c6, c7 capacitor 4.7 m f/50 v 475 50k 952 c5, c8 capacitor 2.3 nf atc100b c10 capacitor 2.7 pf atc100a c11 capacitor 1.0 pf atc100a c13, c14 capacitor 1.5 pf atc100a r1 chip resistor 82 w
2002 sep 27 6 philips semiconductors product speci?cation l-band radar ldmos driver transistor BLL1214-35 package outline references outline version european projection issue date iec jedec eiaj sot467c 99-12-06 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c
2002 sep 27 7 philips semiconductors product speci?cation l-band radar ldmos driver transistor BLL1214-35 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. data sheet status (1) product status (2) definitions objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b.
? koninklijke philips electronics n.v. 2002 sca74 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 613524/01/pp 8 date of release: 2002 sep 27 document order number: 9397 750 09541
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